leshan radio company, ltd. bc846b?1/5 1 3 2 dual general purpose transistors npn duals these transistors are designed for general purpose amplifier applications. they are housed in the sot?363/sc?88 which is designed for low power surface mount applications. maximum ratings rating symbol bc846 bc847 bc848 unit collector?emitter voltage v ceo 65 45 30 v collector?base voltage v cbo 80 50 30 v emitter?base voltage v ebo 6.0 6.0 5.0 v collector current - continuous i c 100 100 100 madc thermal characteristics characteristic symbol max unit total device dissipation p d 380 mw per device 250 mw fr? 5 board, (1) t a = 25c derate above 25c 3.0 mw/c thermal resistance, junction to ambient r ja 328 c/w junction and storage temperature t j , t stg ?55 to +150 c 1. fr?5 = 1.0 x 0.75 x 0.062 in. ordering information device package shipping bc846bdw1t1 sot?363 3000 units/reel BC847BDW1T1 sot?363 3000 units/reel bc847cdw1t1 sot?363 3000 units/reel bc848bdw1t1 sot?363 3000 units/reel bc848cdw1t1 sot?363 3000 units/reel bc846bdw1t1 BC847BDW1T1 bc847cdw1t1 bc848bdw1t1 bc848cdw1t1 sot - 363 /sc - 88 case 419b style1 1 3 2 6 4 5 see table q 1 q 2 6 4 5
leshan radio company, ltd. bc846b?2/5 bc846bdw1t1, BC847BDW1T1, bc847cdw1t1, bc848bdw1t1, bc848cdw1t1 electrical characteristics (t a = 25c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector?emitter breakdown voltage v (br)ceo v (i c = 10 ma) bc846 series 65 ? ? bc847 series 45 ? ? bc848 series 30 ? ? collector?emitter breakdown voltage v (br)ces v (i c = 10 a, v eb = 0) bc846 series 80 ? ? bc847 series 50 ? ? bc848 series 30 ? ? collector?base breakdown voltage v (br)cbo v (i c = 10 a) bc846 series 80 ? ? bc847 series 50 ? ? bc848 series 30 ? ? emitter?base breakdown voltage v (br)ebo v (i e = 1.0 a) bc846 series 6.0 ? ? bc847 series 6.0 ? ? bc848 series 5.0 ? ? collector cutoff current (v cb = 30 v) i cbo ??15na (v cb = 30 v, t a = 150c) ? ? 5.0 a on characteristics dc current gain h fe ? (i c = 10 a, v ce = 5.0 v) bc846b, bc847b, bc848b ? 150 ? bc847c, bc848c ? 270 ? (i c = 2.0 ma, v ce = 5.0 v) bc846b, bc847b, bc848b 200 290 450 bc847c, bc848c 420 520 800 collector?emitter saturation voltage (i c = 10 ma, i b = 0.5 ma) v ce(sat) ? ? 0.25 v collector?emitter saturation voltage ( i c = 100 ma, i b = 5.0 ma) ? ? 0.6 base?emitter saturation voltage (i c = 10 ma, i b = 0.5 ma) v be(sat) ? 0.7 ? v base?emitter saturation voltage (i c = 100 ma, i b = 5.0 ma) ? 0.9 ? base?emitter voltage (i c = 2.0 ma, v ce = 5.0 v) v be(on) 580 660 700 mv base?emitter voltage (i c = 10 ma, v ce = 5.0 v) ? ? 770 small?signal characteristics current?gain ? bandwidth product f t 100 ? ? mhz (i c = 10 ma, v ce = 5.0 vdc, f = 100 mhz) output capacitance (v cb = 10 v, f = 1.0 mhz) c obo ? ? 4.5 pf noise figure (i c = 0.2 ma, nf db v ce = 5.0 v dc , r s = 2.0 k ? , bc846b, bc847b, bc848b ? ? 10 f = 1.0 khz, bw = 200 hz) bc847c, bc848c ? ? 4.0
leshan radio company, ltd. bc846b?3/5 bc846bdw1t1, BC847BDW1T1, bc847cdw1t1, bc848bdw1t1, bc848cdw1t1 typical characteristics i c , collector current (madc) figure 1. normalized dc current gain i c , collector current (madc) figure 2. ?saturation? and ?on? voltages 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 2.0 1.5 1.0 0.8 0.6 0.4 0.3 0.2 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 h fe , normalized dc current gain v,voltage (volts) i b , base current (ma) figure 3. collector saturation region i c , collector current (ma) figure 4. base?emitter temperature coefficient 0.02 0.1 1.0 10 20 2.0 1.6 1.2 0.8 0.4 0 vb , temperature coefficient (mv/ c) 1.0 1.2 1.6 2.0 2.4 2.8 0.2 1.0 10 100 v ce , collector-emitter voltage(v)
leshan radio company, ltd. bc846b?4/5 bc846bdw1t1, BC847BDW1T1, bc847cdw1t1, bc848bdw1t1, bc848cdw1t1 typical characteristics v r , reverse voltage (volts) figure 5. capacitances i c , collector current (madc) figure 6. current?gain ? bandwidth product 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40 10 7.0 5.0 3.0 2.0 1.0 c,capacitance(pf) 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 400 300 200 100 80 60 40 30 20 t f , curren-gain-bandwidth product (mhz) i c , collector current (ma) figure 7. dc current gain i c , collector current (ma) figure 8. ?on? voltage 0.1 0.2 1.0 10 100 2.0 1.0 0.5 0.2 h fe , dc current gain (normalized) 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 0.8 0.6 0.4 0.2 0 v, voltage (volts) i b , base current (ma) figure 9. collector saturation region i c , collector current (ma) figure 10. base?emitter temperature coefficient vb , temperature coefficient (mv/ c) 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 -1.0 -1.4 -1.8 -2.2 -2.6 -3.0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 2.0 1.6 1.2 0.8 0.4 0 v ce , collector-emitter voltage(volts)
leshan radio company, ltd. bc846b?5/5 bc846bdw1t1, BC847BDW1T1, bc847cdw1t1, bc848bdw1t1, bc848cdw1t1 single pulse t 1 z ja (t) = r(t) r ja r ja = 328c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) ? t c = p (pk) r jc (t) t 2 p (pk) duty cycle, d = t 1 /t 2 d=0.5 0.2 0.1 0.05 0.02 0.01 t, time (ms) figure 11. thermal response 0 1.0 10 100 1.0k 10k 100k 1.0m 1.0 0.1 0.01 0.001 i c , collector current (ma) r(t), transient thermal resistance (normalized) -200 -100 -50 -10 -5.0 -2.0 -1.0 -5.0 -10 -30 -45 -65 -100 v ce , collector?emitter voltage (v) figure 12. active region safe operating area the safe operating area curves indicate i c ?v ce limits of thetransistor that must be observed for reliable operation. collector load lines for specific circuits must fall below the limits indicated by the applicable curve. the data of figure 12 is based upon t j(pk) = 150c; t c or t a is variable depending upon conditions. pulse curves are valid for duty cycles to 10% provided t j(pk) < 150c. t j (pk) may be calculated from the data in figure 12. at high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limita- tions imposed by the secondary breakdown.
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